Download FZT855 Datasheet PDF
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FZT855 Description

Features  BVCEO > 150V  IC = 5A High Continuous Collector Current  ICM = 10A Peak Pulse Current  Very Low Saturation Voltage VCE(SAT) < 110mV @ 1A  RCE(SAT) = 50mΩ for a Low Equivalent On-Resistance  hFE Specified Up to 10A for a High Gain Hold-Up  plementary PNP Type: FZT955  Lead-Free Finish; RoHS pliant (Notes 1 & 2)  Halogen and Antimony Free.

FZT855 Key Features

  • BVCEO > 150V
  • IC = 5A High Continuous Collector Current
  • ICM = 10A Peak Pulse Current
  • Very Low Saturation Voltage VCE(SAT) < 110mV @ 1A
  • RCE(SAT) = 50mΩ for a Low Equivalent On-Resistance
  • hFE Specified Up to 10A for a High Gain Hold-Up
  • plementary PNP Type: FZT955
  • Lead-Free Finish; RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability