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ZABG6002 Datasheet

Manufacturer: Diodes Incorporated
ZABG6002 datasheet preview

Datasheet Details

Part number ZABG6002
Datasheet ZABG6002_Diodes.pdf
File Size 179.79 KB
Manufacturer Diodes Incorporated
Description LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
ZABG6002 page 2 ZABG6002 page 3

ZABG6002 Overview

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs monly used in satellite receiver LNBs with a minimum of external ponents whilst operating from a minimal voltage supply and using minimal current. The ZABG6002 has six FET bias stages that can be user programmed to provide either a two plus four arrangement of amplifier FET stages or a two plus two arrangement of amplifier...

ZABG6002 Key Features

  • Six stage FET bias controller, two configurable as mixer stages
  • Operating range of 3.0V to 8.0V
  • Amplifier FET drain voltages set at 2.0V, mixer drain voltage set at 0.25V
  • Amplifier FET drain current selectable from 0 to 15mA, mixer current from 0 to 7.5mA
  • Switchable FET’s for power management
  • FET drain voltages and currents held stable over temperature and VCC variations
  • FETs protected against overstress during powerup and power-down
  • Internal negative supply generator allowing single supply operation (available for external use)
  • Low quiescent supply current, 1.6mA typical
  • Low external ponent count
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