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ZABG6003 - 6 STAGE FET LNA BIAS CONTROLLER

General Description

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply and using minimal current.

The ZABG6003 has six FET bias stages.

Key Features

  • Provides Bias for up to 6 GaAs and HEMT FETs.
  • 2  Amplifier FET Drain Current Programmable (4mA to 15mA).
  • 4  Amplifier FET Drain Current Internally Fixed to 10mA.
  • Operating Range of 2.1V to 5V.
  • Ultra-Low Operating Current of 1.1mA.
  • Dynamic FET Protection.
  • Regulated Negative Rail Generator Requires only 1 External Capacitor.
  • Expended Temperature Range of -40°C to +105°C.
  • U-QFN3030-16 (Type B) Surface Mount Package.
  • Low External Component Count.

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Full PDF Text Transcription for ZABG6003 (Reference)

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NEW PRODUCT ZABG6003 6 STAGE FET LNA BIAS CONTROLLER Summary The ZABG6003 is an advanced GaAs and HEMT FETs bias controller designed to operate from minimal supply rails and intended primarily for satellite Low Noise Blocks (LNBs). With the addition of one capacitor and a resistor, the ZABG6003 provides drain voltage and current control for up to 6 external grounded source FETs. Generating the regulated negative rail required for FET gate biasing whilst operating from a single supply of 2.1V to 5V. The -2V negative bias can also be used to supply other external circuits. Setting drain currents on the ZABG6003 only requires one resistor which controls the drain current of the first stage FETS (D1 and D4).