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ZXMN20B28K - 200V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

and Applications This MOSFET

Key Features

  • 100% Unclamped Inductive Switch (UIS) test in production High avalanche energy pulse withstand capability Low gate drive voltage (Logic level capable) Low input capacitance Low on-resistance Fast switching speed “Green” Component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

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A Product Line of Diodes Incorporated ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 750mΩ @ VGS = 10V 200V 780mΩ @ VGS = 5V ID TA = 25°C 2.3A 2.3A Features and Benefits • • • • • • • 100% Unclamped Inductive Switch (UIS) test in production High avalanche energy pulse withstand capability Low gate drive voltage (Logic level capable) Low input capacitance Low on-resistance Fast switching speed “Green” Component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications.