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ZXMS6003GQ - N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

Self protected low side MOSFET.

Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality.

Intended as a general purpose switch, with status indication and programmable current limit.

Especially suited for loads with a

Features

  • Current Limit Programmable Via External Resistor.
  • Status Pin (analog status indication).
  • Logic Level Input.
  • Short Circuit Protection with Auto Restart.
  • Over Voltage Protection (active clamp).
  • Thermal Shutdown with Auto Restart.
  • Over-Current Protection.
  • Input Protection (ESD).
  • Load Dump Protection (actively protects load).
  • High Continuous Current Rating.
  • Qualified to AEC-Q101 Standards for High Rel.

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Datasheet preview – ZXMS6003GQ

Datasheet Details

Part number ZXMS6003GQ
Manufacturer DIODES
File Size 461.69 KB
Description N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Datasheet download datasheet ZXMS6003GQ Datasheet
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Full PDF Text Transcription

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ADVANCE INFORMATION   Green ZXMS6003GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET®MOSFET WITH PROGRAMMABLE CURRENT LIMIT Product Summary • Continuous Drain Source Voltage VDS = 60V • On-State Resistance 500mΩ • Nominal Load Current (VIN = 5V) 1.4A • Clamping Energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication and programmable current limit. Applications • Especially suited for loads with a high in-rush current such as lamps and motors • All types of resistive, inductive and capacitive loads in switching applications • μC compatible power switch for 12V and 24V DC applications.
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