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ZXTN2011G - NPN Transistor

Key Features

  • BVCEO > 100V.
  • IC = 6A Continuous Collector Current.
  • ICM = 10A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < 65mV max @ 1A.
  • RSAT = 36mΩ @ Ic =6A for Low Equivalent On-Resistance.
  • hFE Specified up to 10A for High Gain Hold Up.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT223.
  • Case Material: Molded Plas.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green ZXTN2011G 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > 100V  IC = 6A Continuous Collector Current  ICM = 10A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 65mV max @ 1A  RSAT = 36mΩ @ Ic =6A for Low Equivalent On-Resistance  hFE Specified up to 10A for High Gain Hold Up  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT223  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208  Weight: 0.