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ZXTN2038F - 80V NPN transistor

General Description

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

Key Features

  • Low saturation voltage for reduced power dissipation.
  • 1 to 2 amp high current capability.
  • Pb-free.
  • SOT23 package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V(BR)CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features • Low saturation voltage for reduced power dissipation • 1 to 2 amp high current capability • Pb-free • SOT23 package Applications • Power MOSFET gate driving • Low loss power switching Ordering information Device ZXTN2038FTA ZXTN2038FTC Reel size 7” 13” Tape width 8mm 8mm Quantity per reel 3,000 10,000 Device marking N38 Issue 4 - January 2009 © Diodes Incorporated, 2008 1 www.zetex.com www.