• Part: ZXTN5551G
  • Description: 160V - SOT223 / NPN high voltage transistor
  • Category: Transistor
  • Manufacturer: Diodes Incorporated
  • Size: 363.53 KB
Download ZXTN5551G Datasheet PDF
Diodes Incorporated
ZXTN5551G
ZXTN5551G is 160V - SOT223 / NPN high voltage transistor manufactured by Diodes Incorporated.
Description A high voltage NPN transistor in a high power dissipation surface mount package Features - - 160V rating SOT223 package Applications - High voltage amplification Tape width (mm) 12 12 Quantity per reel 1000 4000 Ordering information Device ZXTN5551GTA ZXTN5551GTC Reel size (inches) 7 13 C B Pinout - top view Device marking ZXTN 5551 .. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 .zetex. Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Power dissipation at TA = 25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC PD Limit 180 160 6 600 2 16 -55 to 150 Unit V V V m A W m W/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Value 62.5 Unit °C/W NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. .. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 .zetex. Characteristics .. Issue 1 - August 2007 © Zetex Semiconductors plc...