ZXTN5551G
ZXTN5551G is 160V - SOT223 / NPN high voltage transistor manufactured by Diodes Incorporated.
Description
A high voltage NPN transistor in a high power dissipation surface mount package
Features
- - 160V rating SOT223 package
Applications
- High voltage amplification
Tape width (mm) 12 12 Quantity per reel 1000 4000
Ordering information
Device ZXTN5551GTA ZXTN5551GTC Reel size (inches) 7 13
C B Pinout
- top view
Device marking
ZXTN 5551
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Issue 1
- August 2007
© Zetex Semiconductors plc 2007
.zetex.
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Power dissipation at TA = 25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC PD Limit 180 160 6 600 2 16 -55 to 150 Unit V V V m A W m W/°C °C
Thermal resistance
Parameter Junction to ambient(a) Symbol R⍜JA Value 62.5 Unit °C/W
NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
..
Issue 1
- August 2007
© Zetex Semiconductors plc 2007
.zetex.
Characteristics
..
Issue 1
- August 2007
© Zetex Semiconductors plc...