ZXTN5551Z Datasheet | Diodes Incorporated

Description A high voltage NPN transistor in a small outline surface mount package Features - - 160V rating SOT89 package Applications - High voltage amplification Tape width (mm) 12 Quantity per reel 1000 Ordering information Device ZXTN5551ZTA Reel size (inches) 7 C B Pinout - top view Device marking N51 .. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 .zetex. Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Power dissipation at TA =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC PD Limit 180 160 6 600 1.2 9.6 -55 to 150 Unit V V V m A W m W/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Value 104 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. .. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 .zetex. Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. 180 160 Typ. 270 200 Max. Unit V V Conditions IC = 100␮A IC = 1m A (- ) IE = 10␮A VCB = 120V VCB = 120V, Tamb= 100°C IC = 10m A, IB = 1m A(- ) IC = 50m A, IB = 5m A(- ) IC = 10m A, IB = 1m A(- ) IC = 50m A, IB = 5m A(- ) IC = 1m A, VCE = 5V(- ) 250 IC = 10m A, VCE = 5V(- ) IC = 50m A, VCE = 5V(- ) MHz 6 50 95 64 1256 140 260 ns ns ns ns p F IC = 10m A, VCE = 10V f = 100MHz VCB = 10V, f = 1MHz(- ) IC = 10m A, VCE = 10V, f=1k Hz (†) Delay time Rise time Storage time Fall time t(d) t(r) t(s) t(f) VCC = 10V. IC = 1om A, IB1 = IB2= 1m A. Collector-base breakdown BVCBO voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Collector cut-off current BVCEO BVEBO ICBO VCE(sat) 7.85 <1 50...