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AG12G - Silicon Rectifier Cells with polysiloxan passivation

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Part number AG12G
Manufacturer Diotec Semiconductor
File Size 103.51 KB
Description Silicon Rectifier Cells with polysiloxan passivation
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Other Datasheets by Diotec Semiconductor
  • AG12A - Silicon Rectifier Cells with polysiloxan passivation
  • AG12B - Silicon Rectifier Cells with polysiloxan passivation
  • AG12D - Silicon Rectifier Cells with polysiloxan passivation
  • AG12J - Silicon Rectifier Cells with polysiloxan passivation
  • AG12K - Silicon Rectifier Cells with polysiloxan passivation
  • AG12M - Silicon Rectifier Cells with polysiloxan passivation

Full PDF Text Transcription

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AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Weight approx. – Gewicht ca. Dimensions / Maße in mm 12 A 50…1000 V 0.3 g Standard packaging bulk Standard Lieferform lose Maximum ratings and Characteristics Type Typ AG 12A AG 12B AG 12D AG 12G AG 12J AG 12K AG 12M Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600 800 1000 TT = 100/C f > 15 Hz TA = 25/C TA = 25/C Kenn- und Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 80 130 250 450 700 1000 1300 12 A 1) 60 A 1) 500 A 1250 A2s – 50...+150/C – 50...+150/C < 0.95 V < 10 :A Max.
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