Diotec Semiconductor DB4
Bidirectional Si-Trigger-Diodes (DIAC)
| Part No. | DB4 |
|---|---|
| Datasheet | DB4 Download |
| Manufacturer |  Diotec Semiconductor |
| Description | Bidirectional Si-Trigger-Diodes (DIAC) |
| Buy | Stock & Price |
DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Max. Triggerimpuls Glass case Glasgehäuse Weight approx. Gewicht ca. Dimensions / Maße in mm 28 ... 45 V ±2A DO-35 SOD-27 0.13 g see page 16 siehe Seite 16 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Power dissipation – Verlustleistung Peak pulse current (120 pulse repetition rate) Max. Triggerstrom (120 Impulse) Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50 /C tP # 10 :s Ptot IPM Tj TS Grenzwerte 150 mW 1) ± 2 A 1) – 40…+100/C – 40…+150/C Kennwerte dV/dt = 10V/:s DB 3 DB 4 V = 98 % VBO *V(BO)F - V(BO)R* Characteristics Breakover voltage Durchbruchspannung VBO VBO IBO )VBO )VF/R 28 ... 36 V 35 ... 45 V < 200 :A < 3.8 V >5V < 60 K/W 1) Breakover current – Durchbruchstrom Asymmetry of breakover voltage Unsymmetrie der Durchbruchspann...
