DB4
DB3, DB4, DC34
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls.
Max. 0.5 Max. 1.9
Min. 27.5
Black Part No. Black "ST" Brand
XXX Max. 3.9 ST
Min. 27.5
Glass Case DO-35 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Power Dissipation (Ta = 65 OC) Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) Operating Junction and Storage Temperature Range
Symbol Ptot ITRM
Tj,Tstg
Value 150
- 40 to + 125
Unit m W
A OC
Characteristics at Ta = 25 OC Parameter
Breakover Voltage
Breakover Currents Breakover Voltage Symmetry Dynamic Breakover Voltage ΔI = [IBR to IF = 10 m A]
DB3 DC34 DB4
Symbol
V(BR)1 and...
