DBT139F-600 Datasheet | DnI

Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) High mutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10m A) Isolation Voltage ( VISO = 2500V AC ) 2.T2 BVDRM = 600V IT(RMS) = 16 A 3.Gate 1.T1 ITSM = 155 A TO-220F General Description This device is fully isolated package suitable for sensitive gate triggering , direct coupling to TTL, HTL, CMOS and application such as various logic functions,medium power AC switching applications, such as fan speed control, lighting controllers and home appliance equipment. 1 2 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz,Gate Open TC = 36 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =36 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass Ratings 600 16 145/155 105 5.0 0.5 2.0 10 2500 - 40 ~ 125 - 40 ~ 150 2.0 Units V A A A2 s W W A V V °C °C g July, 2005. Rev. 1 copyright@ D&I Semiconductor Co., Ltd., All rights reserved. 1/6 .. Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 20 A, Inst. Measurement Ratings Min. Typ. Max. 2.0 1.6 10 10 Unit IDRM VTM I+GT1 I -GT1 m A V Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) IV Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at mutation Holding Current Thermal Impedance IV VD = 6 V, RL=10 10 25 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C,...