DBT141-600 Datasheet | DnI

Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 25 A ) High mutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10m A) Non-isolated Type 2.T2 BVDRM = 600V IT(RMS) = 25 A 3.Gate 1.T1 ITSM = 250 A TO- 3P General Description This device is sensitive gate triggering triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, high power AC switching applications, such as fan speed, lighting controllers and home appliance equipment. Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 86 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =85 °C, Pulse width Over any 20ms period tp = 20 tp = 20 , TJ=125°C , TJ=125°C 1.0 25 225/250 260 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 6.2 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g July, 2005. Rev. 0 copyright@ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 .. Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 35 A, Inst. Measurement Ratings Min. Typ. Max. 5.0 1.55 10 10 Unit IDRM VTM I+GT1 I -GT1 m A V Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at mutation Holding Current Thermal Impedance VD = 6 V, RL=10 10 25 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -12.5 A/ms, VD=2/3 VDRM 0.2 6 35 Junction to case 1.3 m A V/ m A...