FEATURES
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.1A 3. Source GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. D-PAK 1 2 3 ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 2.1 1.3 8.0 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 148 4.5 4.5 45 0.36 - 55 ~ 150 300 Thermal Charac...
DnI
