DTF4A60 Datasheet | DnI

Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High mutation dv/dt Isolation Voltage ( VISO = 2500V AC ) 2.T2 BVDRM = 600V IT(RMS) = 4 A 3.Gate 1.T1 ITSM = 44 A TO-220F General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, industrial and domestic lighting control and static switching relay. Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC = 99 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 99 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass Ratings 600 4.0 40/44 4.5 3 0.3 1.0 7.0 2500 - 40 ~ 125 - 40 ~ 150 2.0 Units V A A A2 s W W A V V °C °C g MAY 2005. Rev. 0 copyright@ D&I Semiconductor Co., Ltd., All rights reserved. 1/6 .. Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 6 A, Inst. Measurement Ratings Min. Typ. Max. 1.0 1.6 20 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) m A V Gate Trigger Current VD = 6 V, RL=10 20 20 1.5 m...