The AO8810 is the low RDS(ON) trenched N- CH MOSFETs with robust ESD protection.
This product is suitable for Lithium-ion battery pack applications.
The AO8810 meet the RoHS and Green Product requirement with full function reliability approved.
| Part number | AO8810 |
|---|---|
| Manufacturer | DongWei |
| File Size | 773.81 KB |
| Description | Dual N-ch 20V Fast Switching MOSFET |
| Datasheet |
 AO8810 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| AO8810 | 20V Common-Drain Dual N-Channel MOSFET | Alpha & Omega Semiconductors |
| AO8810 | Dual N-Channel MOSFET | VBsemi |
| AO8814 | 20V Common-Drain Dual N-Channel MOSFET | Alpha & Omega Semiconductors |
| AO8816 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| AO8818 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
| Part Number | Description |
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
