AO8810
Description
TSSOP8 Pin Configuration
The AO8810 is the low RDS(ON) trenched N- CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion battery pack applications. The AO8810 meet the Ro HS and Green Product requirement with full function reliability approved.
Product AO8810
Package TSSOP8
Marking 8810
Packing 3000PCS/Reel
Min Unit Quantity 3000PCS
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Symbol VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
IDM PD RθJA TJ, TSTG
Pulsed Drain Current note1 Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
TA = 25℃ TA = 100℃
TA = 25℃
Max. 20 ±12 7 5 24 1.53 111
-55 to +150
Units V V A A A W
℃/W ℃
Dong Wei Electronic Technology Co.,Ltd
.dw-mos.
AO8810 Dual N-ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS
Parameter Drain-Source Breakdown...
