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DIM2400ESS12-A000 - Single Switch IGBT Module

Key Features

  • 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base plate KEY.

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Datasheet Details

Part number DIM2400ESS12-A000
Manufacturer Dynex Semiconductor
File Size 838.45 KB
Description Single Switch IGBT Module
Datasheet download datasheet DIM2400ESS12-A000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIM2400ESS12-A000 Single Switch IGBT Module DS5840-1.1 June 2005 (LN24075) FEATURES • • • • 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base plate KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 1200V 2.2V 2400A 4800A Lead Free construction (measured at the power busbars and not the auxiliary terminals) APPLICATIONS • • High Power Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM2400ESS12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.