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GP400DDM12 - Dual Switch IGBT Module Advance Information

Datasheet Summary

Features

  • s s s s High Thermal Cycling Capability 400A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY.

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Datasheet Details

Part number GP400DDM12
Manufacturer Dynex Semiconductor
File Size 129.50 KB
Description Dual Switch IGBT Module Advance Information
Datasheet download datasheet GP400DDM12 Datasheet
Additional preview pages of the GP400DDM12 datasheet.

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GP400DDM12 GP400DDM12 Dual Switch IGBT Module Advance Information DS5503-1.0 October 2001 FEATURES s s s s High Thermal Cycling Capability 400A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 400A 800A APPLICATIONS s s s s High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 5(E1) 1(E1) 2(C2) 12(C2) 6(G1) 11(G2) 7(C1) 10(E2) 3(C1) 4(E2) The Powerline range of high power modules includes half bridge, dual, chopper and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP400DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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