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GP400DDS18 - Dual Switch IGBT Module Preliminary Information

Key Features

  • s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY.

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Datasheet Details

Part number GP400DDS18
Manufacturer Dynex Semiconductor
File Size 155.16 KB
Description Dual Switch IGBT Module Preliminary Information
Datasheet download datasheet GP400DDS18 Datasheet

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GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 1600A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 2(C2) 4(E2) 1(E1) 7(C1) 5(E1) 6(G1) 12(C2) 11(G2) 10(E2) 3(C1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.