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GP400LSS18 - Single Switch IGBT Module

Key Features

  • s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 400A Per Module KEY.

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Datasheet Details

Part number GP400LSS18
Manufacturer Dynex Semiconductor
File Size 160.38 KB
Description Single Switch IGBT Module
Datasheet download datasheet GP400LSS18 Datasheet

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Full PDF Text Transcription (Reference)

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GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 800A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 5(E1) 3(G1) 1(C) 4(C1) 2(E) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400LSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.