GP401DDM18 - Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

Dynex Semiconductor

Key Features

s s s s s Low VCE(SAT) 400A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY.

GP401DDM18 hi-reliability dual switch low vce(sat) igbt module advance information by Dynex Semiconductor - Datasheet Preview

Datasheet Details

Part number	GP401DDM18
Manufacturer	Dynex Semiconductor
File Size	95.18 KB
Description	Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information
Datasheet	GP401DDM18 Datasheet

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GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES s s s s s Low VCE(SAT) 400A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 400A 800A APPLICATIONS s s s s High Reliability Motor Controllers Traction Drives Low Loss System Retrofit 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.