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GP401DDS18 - Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

Key Features

  • s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY.

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Datasheet Details

Part number GP401DDS18
Manufacturer Dynex Semiconductor
File Size 160.30 KB
Description Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Datasheet download datasheet GP401DDS18 Datasheet

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GP401DDS18 GP401DDS18 Low VCE(SAT) Dual Switch IGBT Module Preliminary Information DS5272-3.0 January 2001 FEATURES s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 400A 800A APPLICATIONS s s s s High Reliability Inverters Motor Controllers 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) Traction Drives Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.