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GP401LSS18 - Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

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Features

  • s n - Channel s Enhancement Mode s High Input Impedance s Optimised For High Power High Frequency Operation s Isolated Base s Ultra Low VCE(sat) s 400A Per Module Module outline type code: L (See package details for further information) Fig.1 Electrical connections - (not to scale) 2(E) 5(E1) 3(G1) 1(C) 4(C1).

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Datasheet Details

Part number GP401LSS18
Manufacturer Dynex Semiconductor
File Size 109.50 KB
Description Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
Datasheet download datasheet GP401LSS18 Datasheet
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GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.
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