XT2116-1001
XT2116-1001 is Fast Turn-on Asymmetric Thyristor manufactured by Dynex Semiconductor.
- Part of the XT2 comparator family.
- Part of the XT2 comparator family.
FEATURES s The XT2116 is Asymmetrical Thyristor in which the reverse voltage capability has been sacrificed to enable a high forward blocking characteristic bined with excellent turn-on performance. s Designed for rapid and efficient switching of high current pulses.
Outline type code: SO28. See Package Details for further information.
VOLTAGE RATINGS
Type Number Max. Rise Time tr (Tcase = 25˚C) ns 100 120 120 140 160 Repetitive Peak Voltage VDRM V 1600 1400 1200 1000 800 VRRM- V <2 <2 <2 <2 <2 Peak Working Voltages VDWM V 1600 1400 1200 1000 800 VRWM- V <2 <2 <2 <2 <2
XT2116
- 1601 XT2116
- 1401 XT2116
- 1201 XT2116
- 1001 XT2116
- 801
CURRENT RATINGS
Symbol IT(AV) IT(RMS) IT Parameter Mean on-state current RMS value Continuous (direct) on-state current Conditions Half wave resistive load, Tcase = 80o C Tcase = 80o C Tcase = 85o C Max. 50 79 68 Units A A A
1/4
XT2116
SURGE RATINGS
Symbol ITSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing 10ms half sine; Tcase = 125o C 3200 A2s Conditions Max. 800 Units A
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Rth(c-h) Tvj Tstg Parameter Thermal resistance
- junction to case Thermal resistance
- case to heatsink Virtual junction temperature Storage temperature range Mounting torque d.c. Mounting torque 3.5Nm with mounting pound On-state (conducting) Conditions Min. -55 3.5- Max. 0.35 0.25 125 125 4.0 Units o
C/W C/W o o
C C o
Nm
- Remended value.
DYNAMIC CHARACTERISTICS
Tcase = 25˚C unless otherwise stated. Symbol VTM IRRM/IDRM d V/dt d I/dt IL IH td tq
†
Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Latching current Holding current Delay time Circuit mutated turn-off time At IT = 100A At VRRM/VDRM
Conditions
Typ. 45 35
- Max. 2.0 10/10 300 2000 250 120†
Units V m A V/µs A/µs m A m A ns µs
Tj = 125o C, To VDRM, RGK = 47Ω Half sine wave of 2µs, Tj = 125˚C Gate source 20V, 10Ω. tr = 160ns VD =...