• Part: XT2116-801
  • Description: Fast Turn-on Asymmetric Thyristor
  • Manufacturer: Dynex Semiconductor
  • Size: 30.49 KB
Download XT2116-801 Datasheet PDF
Dynex Semiconductor
XT2116-801
XT2116-801 is Fast Turn-on Asymmetric Thyristor manufactured by Dynex Semiconductor.
- Part of the XT2 comparator family.
FEATURES s The XT2116 is Asymmetrical Thyristor in which the reverse voltage capability has been sacrificed to enable a high forward blocking characteristic bined with excellent turn-on performance. s Designed for rapid and efficient switching of high current pulses. Outline type code: SO28. See Package Details for further information. VOLTAGE RATINGS Type Number Max. Rise Time tr (Tcase = 25˚C) ns 100 120 120 140 160 Repetitive Peak Voltage VDRM V 1600 1400 1200 1000 800 VRRM- V <2 <2 <2 <2 <2 Peak Working Voltages VDWM V 1600 1400 1200 1000 800 VRWM- V <2 <2 <2 <2 <2 XT2116 - 1601 XT2116 - 1401 XT2116 - 1201 XT2116 - 1001 XT2116 - 801 CURRENT RATINGS Symbol IT(AV) IT(RMS) IT Parameter Mean on-state current RMS value Continuous (direct) on-state current Conditions Half wave resistive load, Tcase = 80o C Tcase = 80o C Tcase = 85o C Max. 50 79 68 Units A A A 1/4 XT2116 SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing 10ms half sine; Tcase = 125o C 3200 A2s Conditions Max. 800 Units A THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Tvj Tstg Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Storage temperature range Mounting torque d.c. Mounting torque 3.5Nm with mounting pound On-state (conducting) Conditions Min. -55 3.5- Max. 0.35 0.25 125 125 4.0 Units o C/W C/W o o C C o Nm - Remended value. DYNAMIC CHARACTERISTICS Tcase = 25˚C unless otherwise stated. Symbol VTM IRRM/IDRM d V/dt d I/dt IL IH td tq † Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Latching current Holding current Delay time Circuit mutated turn-off time At IT = 100A At VRRM/VDRM Conditions Typ. 45 35 - Max. 2.0 10/10 300 2000 250 120† Units V m A V/µs A/µs m A m A ns µs Tj = 125o C, To VDRM, RGK = 47Ω Half sine wave of 2µs, Tj = 125˚C Gate source 20V, 10Ω. tr = 160ns VD =...