E-CMOS ETM1001
The ETM1001 is manufactured on Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The device is a low cost, high linearity, medium power, high efficiency amplifier IC designed for IEEE 802.11b/g, Bluetooth Class 1, and other application in the 2.4GHz ISM band. The device also features analog power control to optimize transmit power while maximizing battery life in portable equipment.| Part No. | ETM1001 |
|---|---|
| Datasheet | ETM1001 Download |
| Manufacturer |  E-CMOS |
| Description | 2.4 ~ 2.5GHz ISM Band Power Amplifier |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The device includes an integrated power detector circuit for closed loop control of output power. The TM1001 is packaged in a compact 3mm by 3mm QFN package with a backside ground.FEATURES
● Integrated Power Detector Circuit.● Analog Gain Control and Power control.
● QFN-12L 3x3 mm with thermal ground.
● RoHS compliant.
● MSL 1 Functional Block diagram
APPLICATIONS
● Bluetooth PA (Class 1)● WLAN 802.11 b/g
● Wireless Data Terminal
● Cordless Handset
● Portable Battery Powered Equipment
ABSOLUTE MAXIMUM RATINGS
Notes: 1. Operation of this device in excess of any maximum rating as specified above may cause permanent damage to the device. 2. Caution! ESD Sensitive Device. E-CMOS Corp. ( Page 1 of 11 1F25N-Rev.F001 2.4-2.5GHz ISM Band Power Amplifier ETM1001 Specification Summary 1. WLAN 802.11 b/g Application: (ETM1001 Evaluation Board for 802.11b application, Vcc1=Vcc2=Vapc=Vpd=+5V, RFin=1dBm TA=+25℃, unless otherwise noted) 2. Bluetooth Class 1 Application: (ETM1...
