Datasheet4U Logo Datasheet4U.com

XTR1K1210 - High Temperature 10A 1200V SiC Schottky Diode

General Description

XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.

Key Features

  • Reverse voltage up to 1200V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Positive temperature coefficient for safe operation and ease paralleling.
  • Extremely fast switching not dependent on temperature.
  • Essentially no reverse or forward recovery.
  • Ruggedized thru-hole packages.

📥 Download Datasheet

Datasheet Details

Part number XTR1K1210
Manufacturer EASii
File Size 438.13 KB
Description High Temperature 10A 1200V SiC Schottky Diode
Datasheet download datasheet XTR1K1210 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XTR101 Precision/ Low Drift 4-20mA TWO-WIRE TRANSMITTER Burr-Brown Corporation
XTR103 4-20mA Current Transmitter Burr-Brown Corporation
XTR104 4-20mA Current Transmitter Burr-Brown Corporation
XTR105 4-20mA CURRENT TRANSMITTER Burr-Brown Corporation
XTR106 4-20mA CURRENT TRANSMITTER Burr-Brown Corporation

Other Datasheets by EASii

Part Number Description
XTR1N0400 High Temperature 40V Diode
XTR1N0800 High Temperature 80V Diode
XTR20410 High Temperature 35V N-Channel Power MOSFET
XTR20810 High Temperature 80V Low-Side N-Channel Power MOSFET
XTR25010 High Temperature Power Gate Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XTR1K1210 High Temperature 10A, 1200V SiC Schottky Diode Data Sheet Rev 3 – June 2024 (DS-00275-12) PRODUCTION XTRPPPPP YYWWANN TO257-3 XTR1K1210 FEATURES • Reverse voltage up to 1200V. • Operational beyond the -60°C to +230°C temperature range. • Positive temperature coefficient for safe operation and ease paralleling. • Extremely fast switching not dependent on temperature. • Essentially no reverse or forward recovery. • Ruggedized thru-hole packages. APPLICATIONS DESCRIPTION XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.