XTR1K1210
XTR1K1210 is High Temperature 10A 1200V SiC Schottky Diode manufactured by EASii.
High Temperature 10A, 1200V SiC Schottky Diode
Data Sheet
Rev 3
- June 2024 (DS-00275-12)
PRODUCTION
XTRPPPPP YYWWANN
TO257-3 XTR1K1210
Features
- Reverse voltage up to 1200V.
- Operational beyond the -60°C to +230°C temperature range.
- Positive temperature coefficient for safe operation and ease paralleling.
- Extremely fast switching not dependent on temperature.
- Essentially no reverse or forward recovery.
- Ruggedized thru-hole packages.
APPLICATIONS
DESCRIPTION
XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C. This diode has zero reverse recovery charge, which...
