XTR1K1210 Description
XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C. This diode has zero reverse recovery charge, which makes it ideally suited for high-frequency and high-efficiency power systems with minimum or no cooling requirements. XTR1K1210 has been designed to reduce system cost and ease adoption.
XTR1K1210 Key Features
- Reverse voltage up to 1200V
- Operational beyond the -60°C to +230°C temperature range
- Positive temperature coefficient for safe operation and ease
- Extremely fast switching not dependent on temperature
- Essentially no reverse or forward recovery
- Ruggedized thru-hole packages