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XTR2N0300 Datasheet High Temperature 30v P-channel Power MOSFET

Manufacturer: EASii

Overview: XTR2N0300 High Temperature 30V P-Channel Power MOSFET Data Sheet Rev 4 – November 2023 (DS-00455-13) XTRPPPPP YYWWANN CDIP8 XTR2N0325 XTRPPPPP YYWWANN CDFP8 XTR2N0325 XTRPPPPP YYWWANN TO257-3 XTR2N0350.

Datasheet Details

Part number XTR2N0300
Manufacturer EASii
File Size 661.10 KB
Description High Temperature 30V P-Channel Power MOSFET
Datasheet XTR2N0300-EASii.pdf

General Description

XTR2N0300 is a family of 30V P-channel power MOSFETs designed to reliably operate over a wide range of temperatures.

Full functionality is guaranteed from -60°C to +230°C, though operation well below and above this temperature range is achieved.

Fabricated on a Silicon-on-Insulator (SOI) process, XTR2N0300 family parts offer reduced leakage currents while providing high drain currents and low RDS(on).

Key Features

  • Minimum BVDSS =-30V.
  • Allowed VGS range.
  • 5.5V to +5.5V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Low RDS(on) o XTR2N0325: 1.05 Ω @ 230°C o XTR2N0350: 0.48 Ω @ 230°C.
  • Maximum Peak ID: o XTR2N0325: 7.5 A @ 230°C o XTR2N0350: 16.5 A @ 230°C.
  • On-time (td(on)+tr): o XTR2N0325: 31 nsec @ 230°C o XTR2N0350: 38 nsec @ 230°C.
  • Off-time (td(off)+tf): o XTR2N0325: 101 nsec @ 230°C o XTR2N0350: 121 nsec @ 230°C.

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XTR2N0300 Distributor