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EDH816H64C70 - High Speed Megabit SRAM Module

Download the EDH816H64C70 datasheet PDF. This datasheet also covers the EDH816H64C35 variant, as both devices belong to the same high speed megabit sram module family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • The EDH816H64C is a 1024K-bit high speed CMOS Static RAM Module consisting of sixteen (16) 64Kx1 Static RAMs in leadless chip carriers surfacemounted onto amultilayered ceramic substrate. Four Chip Select lines are provided (one for each 64Kx4 array) allowing the userto configure the memory into a 64Kx16, 128Kx8 or 256Kx4 organizations. The EDH816H64C is available with access times as fast as 35ns. The module is ahigh density, 40 pin sidebrazed DIP on 900 mil centers. All inputs and outputs are.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDH816H64C35-EDI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EDH816H64C70
Manufacturer EDI
File Size 395.74 KB
Description High Speed Megabit SRAM Module
Datasheet download datasheet EDH816H64C70 Datasheet

Other Datasheets by EDI

Part Number Description
EDH816H64C35 High Speed Megabit SRAM Module
EDH816H64C45 High Speed Megabit SRAM Module
EDH816H64C55 High Speed Megabit SRAM Module
EDH816H16C25 High Speed 256K SRAM Module
EDH816H16C35 High Speed 256K SRAM Module
EDH816H16C45 High Speed 256K SRAM Module
EDH8F1664C100 Megabit SRAM Module
EDH8F1664C120 Megabit SRAM Module
EDH8F1664C150 Megabit SRAM Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
~EDI 64Kx16 CMOS, High Speed Programmable, Static RAM Module EDH816H64C35145155170 High Speed Megabit SRAM Module Features The EDH816H64C is a 1024K-bit high speed CMOS Static RAM Module consisting of sixteen (16) 64Kx1 Static RAMs in leadless chip carriers surfacemounted onto amultilayered ceramic substrate. Four Chip Select lines are provided (one for each 64Kx4 array) allowing the userto configure the memory into a 64Kx16, 128Kx8 or 256Kx4 organizations. The EDH816H64C is available with access times as fast as 35ns. The module is ahigh density, 40 pin sidebrazed DIP on 900 mil centers. All inputs and outputs are TTL compatible and operate from asingle 5V supply. Dual ground pins are provided for maximum noise immunity.