RBV1004 - SILICON BRIDGE RECTIFIERS

EIC discrete Semiconductors

Key Features

:.
High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation.

RBV1004 silicon bridge rectifiers by EIC discrete Semiconductors - Datasheet Preview

Datasheet Details

Part number	RBV1004
Manufacturer	EIC discrete Semiconductors
File Size	19.80 KB
Description	SILICON BRIDGE RECTIFIERS
Datasheet	RBV1004 Datasheet

Other Datasheets by EIC discrete Semiconductors

Part Number	Description
RBV1004D	SILICON BRIDGE RECTIFIERS
RBV1000	SILICON BRIDGE RECTIFIERS
RBV1000D	SILICON BRIDGE RECTIFIERS
RBV1001	SILICON BRIDGE RECTIFIERS
RBV1001D	SILICON BRIDGE RECTIFIERS
RBV1002	SILICON BRIDGE RECTIFIERS
RBV1002D	SILICON BRIDGE RECTIFIERS
RBV1006	SILICON BRIDGE RECTIFIERS
RBV1006D	SILICON BRIDGE RECTIFIERS
RBV1008	SILICON BRIDGE RECTIFIERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBV1000 - RBV1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~ ~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.