RBV1004D Datasheet | EIC Semiconductor

FEATURES : - - - - - - - - High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~ ~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : - Case : Reliable low cost construction utilizing molded plastic technique - Epoxy : UL94V-O rate flame retardant - Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed - Polarity : Polarity symbols marked on case - Mounting position : Any - Weight : 7.7 grams 10 7.5 7.5 2.0 ± 0.2 0.7 ± 0.1 ±0.2 ±0.2 ±0.2 Dimensions in millimeters Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 10 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS V DC RBV RBV RBV RBV RBV RBV RBV 1000D 1001D 1002D 1004D 1006D 1008D 1010D 50 100 200 400 600 800 1000 35 50 70 100 140 200 280 400 10 420 600 560 800 700 1000 17.5 ± 0.5 UNIT Volts Volts Volts Amps. Amps. A2S Volts µA µA °C/W °C °C IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 300 166 1.0 10 200 2.2 - 40 to + 150 - 40 to + 150 Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes...