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RM11B - SILICON RECTIFIER DIODES

Key Features

  • :.
  • High current capability High surge current capability High reliability Low reverse current Low forward voltage drop.

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Datasheet Details

Part number RM11B
Manufacturer EIC discrete Semiconductors
File Size 39.50 KB
Description SILICON RECTIFIER DIODES
Datasheet download datasheet RM11B Datasheet

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Other Datasheets by EIC discrete Semiconductors

Part Number Description
RM11 SILICON RECTIFIER DIODES
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM11A - RM11C PRV : 600 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.