Datasheet Summary
N-Channel Super Trench Power MOSFET
Description
The RM110N85T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
ƽ VDS =85V,ID =110A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
ƽ Excellent gate charge x RDS(on) product(FOM) ƽ Very low on-resistance RDS(on) ƽ 175 °C operating temperature ƽ Pb-free lead plating ƽ 100% UIS tested
Marking and pin assignment
Application
ƽ DC/DC Converter ƽ Ideal for...