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RM110N85T2 - N-Channel Super Trench Power MOSFET

General Description

The RM110N85T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • ƽ VDS =85V,ID =110A RDS(ON).

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Datasheet Details

Part number RM110N85T2
Manufacturer Rectron
File Size 274.12 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet RM110N85T2 Datasheet

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RM110N85T2 N-Channel Super Trench Power MOSFET Description The RM110N85T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.