EIC Semiconductor 1N4449
HIGH SPEED SWITCHING DIODE
| Part No. | 1N4449 |
|---|---|
| Datasheet | 1N4449 Download |
| Manufacturer |  EIC Semiconductor |
| Description | HIGH SPEED SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
:● High switching speed: max. 4 ns
● Reverse voltage:max. 75V
● Peak reverse voltage:max. 100 V
● Pb / RoHS Free
MECHANICAL DATA
: Case: DO-35 Glass Case Weight: approx. 0.13g Certificate TH97/10561QM Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )MAXIMUM RATINGS
and Thermal Characteristics ( Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Forward DC Current Maximum Average Forward Current Maximum Surge Forward Current at tp = 1 µs Power Dissipation Maximum Junction Temperature Storage Temperature Range Symbol VRM VR IF IF(AV) IFSM PD TJ TSTG Value 100 75 200 150 2 500 200 -65 to + 200 Unit V V mA mA A mW °C °CELECTRICAL CHARACTERISTICS
( Ta = 25 °C) Parameter Symbol Reverse Current IR Forward Voltage VF Reverse Breakdown Voltage Diode C