1N4449 Datasheet PDF

FEATURES

Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te

ELECTRICAL CHARACTERISTICS

Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 Max. junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175 175 Max. forward voltage drop Max. reverse current Max. reverse recovery time VF V 1.0 1.0 1.0 0.55 0.55 1.0 1.0 1.0 0.54 0.50 0.55 1.0 at IF mA 10 10 200 0.10 0.10 0.10 20 30 0.50 0.10 0.01 10 In nA 25 25 100 50 50 100 25 25 50 50 50 100 at VR V 20 20 50 30 50 25 20 20 30 30 20 50 trr nS Max.