EIC Semiconductor 1SS133
HIGH SPEED SWITCHING DIODE
| Part No. | 1SS133 |
|---|---|
| Datasheet | 1SS133 Download |
| Manufacturer |  EIC Semiconductor |
| Description | HIGH SPEED SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
:● High switching speed: max. 4 ns
● Continuous reverse voltage:max. 80 V
● Repetitive peak reverse voltage:max. 90 V
● Pb / RoHS Free
MECHANICAL DATA
: Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )MAXIMUM RATINGS
and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Power Dissipation Maximum Non-repetitive Peak Forward Current Maximum Junction Temperature Storage Temperature Range Symbol VRM VR IF IFM PD IFSM TJ TS Value 90 80 130 400 300 600 175 -65 to + 175 Unit V V mA mA mW mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C