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1SS133
Silicon Epitaxial Planar Switching Diode
Features • Glass sealed envelope • High speed • High reliability
Applications • High-speed switching
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.
1SS133 Datasheet
