PACO 1SS133
Silicon Epitaxial Planar Switching Diode
FEATURES
● Glass sealed envelope● High speed
● High reliability
APPLICATIONS
● High-speed switchingABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Min. 27.5 Glass Case DO-34 Dimensions in mm Glass Case DO-35 Dimensions in mm Symbol VRM VR IF(AV) IFM IFSM Ptot Tj Tstg Value 90 80 130 400 600 300 175 - 65 to + 175 Unit V V mA mA mA mW