• Part: 1SS181
  • Description: 85V 100mA SILICON EPITAXIAL PLANAR DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 76.29 KB
Download 1SS181 Datasheet PDF
EIC Semiconductor
1SS181
1SS181 is 85V 100mA SILICON EPITAXIAL PLANAR DIODE manufactured by EIC Semiconductor.
FEATURES : - Small package - Low forward voltage - Fast reverse recovery time - Small total capacitance - Ultra high speed switching application - Pb / Ro HS Free MECHANICAL DATA : - Case : SOT-23 plastic Case - Marking Code : A3 Certificate TH97/10561QM Certificate TW00/17276EM SILICON EPITAXIAL PLANAR DIODE SOT-23 1.40 0.95 0.50 0.35 0.19 0.08 0.100 0.013 3.10 2.70 1.65 1.20 3.0 2.2 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IFM IF(AV) IFSM Ptot TJ TSTG Value 85 80 300 100 2 150 125 -55 to +125 Unit V V m A m A A m W °C °C ELECTRICAL CHARACTERISTICS (Ta =25...