EIC Semiconductor 1SS181
85V 100mA SILICON EPITAXIAL PLANAR DIODE
| Part No. | 1SS181 |
|---|---|
| Datasheet | 1SS181 Download |
| Manufacturer |  EIC Semiconductor |
| Description | 85V 100mA SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
: * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS FreeMECHANICAL DATA
: * Case : SOT-23 plastic Case * Marking Code : A3 Certificate TH97/10561QM Certificate TW00/17276EM SILICON EPITAXIAL PLANAR DIODE SOT-23 1.40 0.95 0.50 0.35 0.19 0.08 0.100 0.013 3.10 2.70 3 1 2 1.02 2.04 0.89 1.78 3 1.65 1.20 3.0 2.2 1 2 Dimensions in millimetersMAXIMUM RATINGS
AND THERMAL CHARACTERISTICS (Ta =25 °C) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IFM IF(AV) IFSM Ptot TJ TSTG Value 85 80 300 100 2 150 125 -55 to +125 Unit V V mA mA A mW °C °CELECTRICAL CHARACTERISTICS
(Ta =25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time Test Condition IF = 1 mA IF = 10 mA IF = 100 mA VR = 30 V VR = 80 V VR = 0 V, f = 1 MHz IR = 10 mA Symbol VF IR CT Trr Min. - TYP 0.61 0.74 0.92 2.2 1.6 Max.