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1SS184 Datasheet PDF

EIC Semiconductor 1SS184

SILICON EPITAXIAL PLANAR DIODE

Part No. 1SS184
Datasheet 1SS184 Download
Manufacturer
EIC Semiconductor
Description SILICON EPITAXIAL PLANAR DIODE
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1SS184 datasheet page 1 preview

FEATURES

: * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free SILICON EPITAXIAL PLANAR DIODE SOT-23 0.19 0.08 1.40 0.95 0.50 0.35 0.100 0.013 3.10 2.70 3 1 2 2.04 1.78 1.02 0.89 3 1.65 1.20 3.0 2.2

MECHANICAL DATA

: * Case : SOT-23 plastic Case * Marking Code : B3 12 Dimensions in millimeters

MAXIMUM RATINGS

AND THERMAL CHARACTERISTICS (Ta =25 °C) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IFM IF(AV) IFSM Ptot TJ TSTG Value 85 80 300 100 2 150 125 -55 to +125 Unit V V mA mA A mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta =25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time Test Condition IF = 1 mA IF = 10 mA IF = 100 mA VR = 30 V VR = 80 V VR = 0 V, f = 1 MHz IR = 10 mA Symbol VF IR CT Trr Min. - TYP 0.6 0.72 0.9 0.9 1.6 Max.
1SS184 page 2 preview