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1SS198 Datasheet PDF

EIC Semiconductor 1SS198

SCHOTTKY BARRIER DIODE

Part No. 1SS198
Datasheet 1SS198 Download
Manufacturer
EIC Semiconductor
Description SCHOTTKY BARRIER DIODE
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1SS198 datasheet page 1 preview

FEATURES

:
● Low forward voltage
● High breakdown voltage
● Guard ring protected
● Hermetically-sealed leaded glass package
● Low diode capacitance.
● Pb / RoHS Free

MECHANICAL DATA

: Case: DO-34 Glass Case Weight: approx. 0.11g TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )

MAXIMUM RATINGS

and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specifie.d) Parameter Symbol Reverse Voltage VR Average Rectified Current Io Junction Temperature TJ Storage temperature range Tstg Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Value 10 30 125 -55 to + 125 Unit V mA °C °C

ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Reverse Curren
1SS198 page 2 preview