Hitachi 1SS198
Silicon Schottky Barrier Diode
| Part No. | 1SS198 |
|---|---|
| Datasheet | 1SS198 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Detection efficiency is very good.● Small temperature coefficient.
● Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 Cathode Green Mark 2 Package Code MHD Outline 2 1 Cathode band 2 1. Cathode 2. Anode 1SS198
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Notes: 1. *1 Symbol IF IR C η — Min 4.5 — — 70 100 Typ — — — — — Max — 70 1.5 — — Unit mA µA pF % V Test Condition VF = 1V VR = 6V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL = 20pF C = 200pF, Both forward and reverse direction 1 pulse. Failure Criterion ; IR ≥ 140µA at V R = 6V 2 1SS198 Main Characteristic -1 -2 10 10 Forward current I F (A) 10 -3 Reverse current I R (A) 10 -2 10 -3 10 -4 10 -4 10 -5 10 -5 0 0.4 0.8 1.2 1.6 2.0 10 -6 0 2 Forward voltage V F (V) Fig.1 Forward current Vs.
