1SS355
1SS355 is SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE manufactured by EIC Semiconductor.
FEATURES
:
- Smal plastic package suitable for surface mounted design
- High reliability with high surge current handling capability
- Pb / Ro HS Free
SOD-323
1.80 1.60
1.35 1.15
APPLICATIONS
- High speed switching
0.15 (max)
1.10 0.80
MECHANICAL DATA :
- Case : SOD-123
- Marking Code : " W2 "
22..8300
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics (Rating at 25 C ambient temperature unless otherwise specified)
Parameter
Maximum Peak Reverse Voltage Maximum DC Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Surge Current (1s) Junction Temperature Storage Temperature Range
Symbol
VRRM VRM
IF IFM IFSM TJ TS
Value
90 80 100 255 500 150 -55 to + 150
Unit
V V m A m A m A C C
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Parameter
Forward Voltage Reverse Current Capacitance between terminals
Reverse Recovery Time
Symbol
VF IR CT
Trr
Test Condition IF = 100 m A VR = 80 V f = 1MHz ; VR = 0.5 IF = 10 m A , VR = 6 V RL = 100
Min. Typ. Max.
Unit
-...
