EIC Semiconductor 1SS390
SILICON EPITAXIAL PLANAR DIODE
| Part No. | 1SS390 |
|---|---|
| Datasheet | 1SS390 Download |
| Manufacturer |  EIC Semiconductor |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
: * Extremely small surface mounting type * High reliabilityAPPLICATIONS
* High frequency switchingMECHANICAL DATA
: * Case : SOD-523 plastic Case * Marking Code : " K " 0.70 0.85 0.60 0.75 SILICON EPITAXIAL PLANAR DIODE SOD-523 1.25 1.15 1.65 1.55 Dimensions in millimeters 0.4 0.135 0.3 0.127ABSOLUTE MAXIMUM RATINGS
(Ta = 25 °C) Parameter Maximum Reverse Voltage Maximum Average Forward Current Junction Temperature Storage Temperature Range Symbol VR IF TJ TSTG Value 35 100 125 -55 to + 125ELECTRICAL CHARACTERISTICS
(Ta = 25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Forward Operration Resistance Symbol VF IR CT rf Test Condition IF = 10 mA VR = 25 V at VR = 6v , f = 1MHz at IF = 2 mA ,f = 100 MHz Max. 1.0 10 1.2 0.9 Unit V mA °C °C Unit V μA pF Ω Page 1 of 2 Rev. 00 : June 26, 2012 RATING AND CHARACTERISTIC CURVES ( 1SS390 ) FIG.1 - FORWARD CHARACTERISTICS FIG.2 - REVERSE CHARACTERISTICS FIG.3 - CAPACITANCE VS. TERMINALS CHARACTERISTICS FIG.4 - FORWARD OPERATING RESISTANCE CHARACTERISTICS Page 2 of 2 Rev.