EIC Semiconductor BAS216WS
HIGH SPEED SWITCHING DIODE
| Part No. | BAS216WS |
|---|---|
| Datasheet | BAS216WS Download |
| Manufacturer |  EIC Semiconductor |
| Description | HIGH SPEED SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
: * Ultra small plastic SMD package * High switching speed: max. 4 ns * Reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Pb / RoHS FreeMECHANICAL DATA
: * Case : SOD-323 plastic Case * Weight : approx. 0.004 g 2.80 2.30 Dimensions in millimeters 0.15(max)ABSOLUTE MAXIMUM RATINGS
( Ta = 25 °C unless otherwise specified) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Forward Current Maximum Non-repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperature Range t = 1 µs t = 1 ms t =1s Symbol VRRM VR IF IFSM Ptot TJ TSTG Value 85 75 250 4.0 1.0 0.5 400 150 -65 to +150 Unit V V mA A mW °C °CELECTRICAL CHARACTERISTICS
( Ta = 25 °C unless otherwise specified) Parameter Forward Voltage Reverse Current Diode Capacitance Reverse Recovery Time Test Condition IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 25 V VR = 75 V VR = 25 V , Tj = 150 °C VR = 75 V , Tj = 150 °C VR = 0 V, f = 1 MHz when switched from IF = 10 mA to IR = 10mA; RL =100 Ω; measure at IR = 1 mA Symbol VF IR Ctot Trr Max.