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BAS216WS Datasheet PDF

Continental Device India BAS216WS

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. BAS216WS
Datasheet BAS216WS Download
Manufacturer
Continental Device India
Description SILICON EPITAXIAL SWITCHING DIODE
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BAS216WS datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

DESCRIPTION

Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non Repetitive Peak Forward Surge Current at t=1s at t=1ms at t=1µs Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRRM VR IF IFRM IFSM Ptot Tj Tstg

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION Forward Voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Reverse Current IR VR=25V VR=75V VR=25V, Tj=150ºC VR=75V, Tj=150ºC VALUE 85 75 250 500 0.5 1.0 4.0 200 150 - 65 to +150 MIN MAX 0.715 0.855 1.0 1.25 30 1.0 30 50 DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time BAS216WS Rev010410E Ctot VR=0V, f=1MHz 1.5 IF=10mA, to IR=10mA trr RL=100 Ω 4.0 Measured at IR=1mA . UNIT V V mA mA A A A mW ºC ºC UNIT V V V V nA µA µA µA pF ns Continental Device India Limited Data Sheet Page 1 of 3 BAS216WS SOD-323 PLASTIC PCAKAGE Com pone nt D isposa l I nst r uct ions 1. CDI...
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