Part BAS216WS
Description SILICON EPITAXIAL SWITCHING DIODE
Category Diode
Manufacturer Continental Device India
Size 82.53 KB
Pricing from 0.0229 USD, available from Win Source and Run Hong Electronics.
Continental Device India

BAS216WS Overview

Description

SYMBOL TEST CONDITION Forward Voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Reverse Current IR VR=25V VR=75V VR=25V, Tj=150ºC VR=75V, Tj=150ºC VALUE 85 75 250 500 0.5 1.0 4.0 200 150 - 65 to +150 MIN MAX 0.715 0.855 1.0 1.25 30 1.0 30 50 DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time BAS216WS Rev010410E Ctot VR=0V, f=1MHz 1.5 IF=10mA, to IR=10mA trr RL=100 Ω 4.0 Measured at IR=1mA. UNIT V V mA mA A A A mW ºC ºC UNIT V V V V nA µA µA µA pF ns Continental Device India Limited Data Sheet Page 1 of 3 BAS216WS SOD-323 PLASTIC PCAKAGE Com pone nt D isposa l I nst r uct ions 1.

Price & Availability

Seller Inventory Price Breaks Buy
Win Source 20 - View Offer
Run Hong Electronics 6280 1+ : 0.0229 USD View Offer