BAS216WS - SILICON EPITAXIAL SWITCHING DIODE

CDIL

General Description

Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non Repetitive Peak Forward Surge Current at t=1s at t=1ms at t=1µs Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRRM VR IF IFRM IFSM Ptot Tj Tstg ELECTRICAL CHARAC

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BAS216WS silicon epitaxial switching diode by CDIL - Datasheet Preview

Datasheet Details

Part number	BAS216WS
Manufacturer	CDIL
File Size	82.53 KB
Description	SILICON EPITAXIAL SWITCHING DIODE
Datasheet	BAS216WS Datasheet

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE BAS216WS SOD-323 PLASTIC PCAKAGE Marking BAS216WS=W2 with cathode band ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non Repetitive Peak Forward Surge Current at t=1s at t=1ms at t=1µs Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRRM VR IF IFRM IFSM Ptot Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Forward Voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Reverse Current IR VR=25V VR=75V VR=25V, Tj=150ºC VR=75V, Tj=150ºC VALUE 85 75 250 500 0.5 1.0 4.