EIC Semiconductor BAS85
SCHOTTKY BARRIER DIODE
FEATURES
: * For general purpose applications. * This diode features low turn-on voltage. * This device isprotected by a PN junction guard guard ring against excessive voltage, such as electrostatic discharges * This diode is also available in the DO-35 case with type designation BAT85. * Pb / RoHS FreeMECHANICAL DATA
: Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g SCHOTTKY BARRIER DIODE MiniMELF (SOD-80C) Cathode Mark φ 0.063 (1.64) 0.055 (1.40) 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) 0.049 (1.25)Min. Mounting Pad Layout 0.098 (2.50) Max. 0.079 (2.00)Min. 0.197 (5.00) REF Dimensions in inches and ( millimeters )MAXIMUM RATINGS
and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Continuous Reverse Voltage Continuous Forward Current Peak Forward Current Forward Surge Current (tp < 1s, Tamb = 25 °C) Power Dissipation (Infinite Heatsink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range Note: (1) Valid provided that electrodes are kept at ambient temperature.