EIC Semiconductor BAV21WS
SMALL SIGNAL DIODES
| Part No. | BAV21WS |
|---|---|
| Datasheet | BAV21WS Download |
| Manufacturer |  EIC Semiconductor |
| Description | SMALL SIGNAL DIODES |
| Buy | Stock & Price |
FEATURES
: * Silicon Epitaxial Planar Diode * For General Purpose * Pb / RoHS FreeMECHANICAL DATA
: * Case : SOD-323 plastic Case max. 0.004(0.1) 0.049 (1.25) max. 0.059 (1.5) 0.043 (1.1) min. 0.010 (0.25) Dimensions in inches and (millimeters) max. 0.006 (0.15)MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Parameter Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range Symbol VR VRM BAV19WS 100 120 BAV20WS 150 200 BAV21WS 200 250 IF(AV) 250 IFSM Ptot 1.0 200 1) Tj 150 TS -65 to + 175 Unit V V mA A mW °C °CELECTRICAL CHARACTERISTICS
(Rating at Tj = 25 °C unless otherwise specified) Parameter Symbol Test Condition Forward Voltage VF Leakage Current Capacitance BAV19WS BAV20WS BAV21WS IR Ctot Reverse Recovery Time...