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BAV70W - Silicon Epitaxial Planar Switching Diode

Key Features

  • Fast switching diode.
  • Ultra small surface mount package SOT-323 3 12 Dimensions in millimeters Absolute Maximum Ratings (Ta = 25 OC) Parameter Non-Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Single diode loaded Double diode loaded Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IF IFRM IFSM Ptot.

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Datasheet Details

Part number BAV70W
Manufacturer EIC
File Size 529.45 KB
Description Silicon Epitaxial Planar Switching Diode
Datasheet download datasheet BAV70W Datasheet

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Certificate TH97/10561QM Certificate TW00/17276EM BAV70W Silicon Epitaxial Planar Switching Diode Features • Fast switching diode • Ultra small surface mount package SOT-323 3 12 Dimensions in millimeters Absolute Maximum Ratings (Ta = 25 OC) Parameter Non-Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Single diode loaded Double diode loaded Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IF IFRM IFSM Ptot Tj Tstg Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Leakage Current at VR = 25 V at VR =