EIC Semiconductor BAV70W
Silicon Epitaxial Planar Switching Diode
| Part No. | BAV70W |
|---|---|
| Datasheet | BAV70W Download |
| Manufacturer |  EIC Semiconductor |
| Description | Silicon Epitaxial Planar Switching Diode |
| Buy | Stock & Price |
FEATURES
● Fast switching diode● Ultra small surface mount package SOT-323 3 12 Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Non-Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Single diode loaded Double diode loaded Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IF IFRM IFSM Ptot Tj Tstg Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Leakage Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, Irr = 0.1 IR, RL = 100 Ω Symbol VBR(R) VF