Part: GBJ2506Description: SILICON BRIDGE RECTIFIERSManufacturer: EIC SemiconductorSize: 42.20 KB
Key Features
Glass Passivated Die Construction * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * High current capability * Very good heat dissipation * Pb / RoHS Free
Datasheets by Manufacturer
GBJ2506 — Sangdest Microelectronics — Single-Phase 25.0A Glass Passivated Bridge RectifierGBJ2506 — Diodes Incorporated — 25A GLASS PASSIVATED BRIDGE RECTIFIERGBJ2506 — Taitron Components — Single-Phase Glass Passivated Bridge RectifierGBJ2506 — MIC — SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERGBJ2506 — Sirectifier — Single Phase Bridge RectifiersGBJ2506 — Mospec Semiconductor — GLASS PASSIVATED BRIDGE SINGLE PHASE BRIDGE RECTIFIERSGBJ2506A — Nell Power Semiconductor — Avalanche Glass Passivated Single-Phase Bridge RectifierGBJ2506-G — Comchip Technology — Glass Passivated SINGLE PHASE BRIDGE RectifierGBJ2506 — HY ELECTRONIC — GLASS PASSIVATED BRIDGE RECTIFIERSGBJ2506 — SeCoS Halbleitertechnologie GmbH — Bridge Rectifier
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